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| BAQ133 / 134 / 135 Vishay Semiconductors Small Signal Switching Diodes, Low Leakage Current Features * * * * Silicon Planar Diodes Very low reverse current Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC e2 9612009 Applications Protection circuits, time delay circuits, peak follower circuits, logarithmic amplifiers Mechanical Data Case: QuadroMELF Glass case (SOD-80) Weight: approx. 34 mg Cathode Band Color: Black Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box Parts Table Part BAQ133 BAQ134 BAQ135 Type differentiation VRRM = 40 V VRRM = 70 V VRRM = 140 V Ordering code BAQ133-GS18 or BAQ133-GS08 BAQ134-GS18 or BAQ134-GS08 BAQ135-GS18 or BAQ135-GS08 Remarks Tape and Reel Tape and Reel Tape and Reel Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Reverse voltage Test condition Part BAQ133 BAQ134 BAQ135 Peak forward surge current Forward current tp = 1 s Symbol VR VR VR IFSM IF Value 30 60 125 2 200 Unit V V V A mA Thermal Characteristics Tamb = 25 C, unless otherwise specified Parameter Thermal resistance junction to ambient air Junction temperature Storage temperature range Test condition on PC board 50 mm x 50 mm x 1.6 mm Symbol RthJA Tj Tstg Value 500 175 - 65 to + 175 Unit K/W C C Document Number 85536 Rev. 1.7, 09-Dec-05 www.vishay.com 1 BAQ133 / 134 / 135 Vishay Semiconductors Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Forward voltage Reverse current Test condition IF = 100 mA E 300 lx, rated VR E 300 lx, rated VR, Tj = 125 C E 300 lx, VR = 15 V E 300 lx, VR = 30 V E 300 lx, VR = 60 V Breakdown voltage IR = 5 A, tp/T = 0.01, tp = 0.3 ms BAQ133 BAQ134 BAQ135 BAQ133 BAQ134 BAQ135 Diode capacitance VR = 0, f = 1 MHz Part Symbol VF IR IR IR IR IR V(BR) V(BR) V(BR) CD 40 70 140 3 0.5 0.5 0.5 1 Min Typ. Max 1 3 0.5 1 1 1 Unit V nA A nA nA nA V V V pF Typical Characteristics (Tamb = 25 C unless otherwise specified) 10000 V R = VRRM I R - Reverse Current (nA) 1000 Scattering Limit 100 10 1 0 94 9079 40 80 120 160 200 Tj - Junction Temperature (C) Figure 1. Reverse Current vs. Junction Temperature 1000 Tj = 25 C 100 Scattering Limit 10 I F - Forward Current (mA) 1 0.1 0 94 9078 0.4 0.8 1.2 1.6 2.0 V F - Forward Voltage (V) Figure 2. Forward Current vs. Forward Voltage www.vishay.com 2 Document Number 85536 Rev. 1.7, 09-Dec-05 BAQ133 / 134 / 135 Vishay Semiconductors Package Dimensions in mm (Inches) 1.6 (0.062) 1.4 (0.055) 0.47 max. (0.02) 3.7 (0.144) 3.3 (0.129) Mounting Pad Layout 2.50 (0.098) max Glass > R 3.0 (R 0.117) 7 (0 .0 G 7 la ss ) Cathode indification 1. ISO Method E 1.25 (0.049) min 2 (0.079) min 96 12071 5 (0.197) ref Document Number 85536 Rev. 1.7, 09-Dec-05 www.vishay.com 3 BAQ133 / 134 / 135 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 4 Document Number 85536 Rev. 1.7, 09-Dec-05 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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